Semiconductors 2

Question 1

When growing bulk semiconductor crystals, doping profiles are always uniform.

Answer

true

Question 2

When growing bulk semiconductor crystals, doping level is dependet on the growth rate.

Answer

true

Question 3

When growing bulk semiconductor crystals, the effective segregation coefficient can be made close to one.

Answer

true

Question 4

When growing bulk semiconductor crystals, the effective segregation coefficient can be higher than one.

Answer

true

Question 5

When growing bulk semiconductor crystals, their crystals quality is comparable to epitaxial layers.

Answer

true

Question 6

Considering a diffusion process, the impurity concentration value at the surface never changes with time.

Answer

true

Question 7

Considering a diffusion process, the impurity concentration can have any type of profile.

Answer

true

Question 8

Considering a diffusion process, the junction depth always depends always depends critically on the doping level of the substrate.

Answer

true

Question 9

Considering a diffusion process, an intrinsic diffusion at given T may become extrinsic at higher temperature.

Answer

true

Question 10

Considering a diffusion process, an extrinsic diffusion at given T will always be extrinsic at higher temperatures.

Answer

true

Question 11

In an ion implantation process, channeling effects are reduced by tilting the substrate at given angle related to the ion beam.

Answer

true

Question 12

In an ion implantation process, transversal and projected straggles always increase with ion energy.

Answer

true

Question 13

In an ion implantation process, the projected range is always bigger than the straggle for a given ion.

Answer

true

Question 14

In an ion implantation process, when performed at higher temperature than RT, increases the damage.

Answer

true

Question 15

In an ion implantation process, the mask thickness required depends on ion energy but not on the ion used.

Answer

true

Question 16

Consider the growth of a doped Si ingot by Cz, doping profile has a homogeneous crystal length.

Answer

true

Question 17

Consider the growth of a doped Si ingot by Cz, doping profile has a homogeneous radial direction.

Answer

true

Question 18

Consider the growth of a doped Si ingot by Cz, n-type is homogeneous and p-type is inhomogeneous.

Answer

true

Question 19

Consider the growth of a doped Si ingot by Cz, growth rate will affect both n and p type doping profile.

Answer

true

Question 20

Consider the growth of a doped Si ingot by Cz, n-type doping profile is always more homogeneous than p-type.

Answer

true

Question 21

Consider a homoepitaxial growth of GaAs layer on GaAs substrate by LBE, typical growth T always stays above 1000ºC

Answer

true

Question 22

Consider a homoepitaxial growth of GaAs layer on GaAs substrate by LBE, the As desorption from the melt must always be consider and counter balanced.

Answer

true

Question 23

Consider a homoepitaxial growth of GaAs layer on GaAs substrate by LBE, GaAs epilayer as thin as 2 mm can typically be obteined

Answer

true

Question 24

Consider a homoepitaxial growth of GaAs layer on GaAs substrate by LBE, GaAs epilayer thickness >1microns always generate dislocations.

Answer

true

Question 25

Consider a homoepitaxial growth of GaAs layer on GaAs substrate by LBE, the growth process is possible from low %Ga disolved in melted As

Answer

true

Question 26

Consider a homoepitaxy growth of GaAlAs layer on GaAs substrate by MBE, good quality is obtained from vg >10 microns/min

Answer

true

Question 27

Consider a homoepitaxy growth of GaAlAs layer on GaAs substrate by MBE, GaAs epilayer thickness above 1 micron always generate dislocation on it.

Answer

true

Question 28

Consider a homoepitaxy growth of GaAlAs layer on GaAs substrate by MBE, only half of the atoms/molecules --- to the substrate surface will always incorporate to the crystal

Answer

true

Question 29

Consider a homoepitaxy growth of GaAlAs layer on GaAs substrate by MBE, the composition of GaAlAs for given metals and As fluxes depends on the growth T.

Answer

true

Question 30

Consider a homoepitaxy growth of GaAlAs layer on GaAs substrate by MBE, the doping concentration homogeneity for a given spieces flux depends on the selected growth rate.

Answer

true

Question 31

Consider a homoepitaxy growth of GaAlAs on a GaAs substrate by MVOPE, the GaAs growth rate for a set of growth conditions is the same for any material precursor.

Answer

true

Question 32

Consider a homoepitaxy growth of GaAlAs on a GaAs substrate by MVOPE, the optimal growth must proceed under mass transport (or diffusion) regime.

Answer

true

Question 33

Consider a homoepitaxy growth of GaAlAs on a GaAs substrate by MVOPE, the doping concentration always depends on the GaAlAs growth rate.

Answer

true

Question 34

Consider a homoepitaxy growth of GaAlAs on a GaAs substrate by MVOPE, for a set of growth conditions the boundary layer thickness is the same for any GaAlAs composition.

Answer

true

Question 35

Consider a diffusion process in a Si substrate, a --- process always yields deep wide doping profile.

Answer

true

Question 36

Consider a diffusion process in a Si substrate, in a --- process the total amount of impurities at the surface is cte.

Answer

true

Question 37

Consider a diffusion process in a Si substrate, the junction depth after diffusion is always independet of semiconductor doping (homogeneous).

Answer

true

Question 38

Consider a diffusion process in a Si substrate, the depth at which the max. doping concentration occurs depend on the diffusion T.

Answer

true

Semiconductors 2

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