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Field Effect Transistors

Tony Mae 32 preguntas

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Preguntas del test (32)

  1. 1Junction Field Effect Transistors (JFET) contain how many diodes?
    1. A4
    2. B3
    3. C2
    4. D1
  2. 2When an input delta of 2 V produces a transconductance of 1.5 mS, what is the drain current delta?
    1. A666 mA
    2. B3 mA
    3. C0.75 mA
    4. D0.5 mA
  3. 3When not in use, MOSFET pins are kept at the same potential through the use of:
    1. AShipping foil
    2. BNonconductive foam
    3. CConductive foam
    4. Da wrist strap
  4. 4D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of:
    1. Alow output impedance
    2. Bcapacitive reactance
    3. Chigh input impedance
    4. Dinductive reactance
  5. 5A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:
    1. Agate
    2. Bblock
    3. Cdrain
    4. Dheat sink
  6. 6When testing an n-channel D-MOSFET, resistance G to D = infinity, resistance G to S = infinity, resistance D to SS = and 500 ohms, depending on the polarity of the ohmmeter, and resistance D to S = 500 infinity. What is wrong?
    1. Ashort D to S
    2. Bopen G to D
    3. Copen D to SS
    4. Dnothing
  7. 7In the constant-current region, how will the IDS change in an n-channel JFET?
    1. AAs VGS decreases ID decreases.
    2. BAs VGS increases ID increases.
    3. CAs VGS decreases ID remains constant.
    4. DAs VGS increases ID remains constant.
  8. 8A MOSFET has how many terminals?
    1. A2 or 3
    2. B3
    3. C4
    4. D3 or 4
  9. 9IDSS can be defined as:
    1. Athe minimum possible drain current
    2. Bthe maximum possible current with VGS held at –4 V
    3. Cthe maximum possible current with VGS held at 0 V
    4. Dthe maximum drain current with the source shorted
  10. 10 What is the input impedance of a common-gate configured JFET?
    1. Avery low
    2. Blow
    3. Chigh
    4. Dvery high

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Descripción
II Engineering Electronics II Test sobre Field Effect Transistors, creado por Tony Mae el 06/03/2021.
Idioma
English
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