Test
Chapter 8 Transistor Biasing
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Preguntas del test (30)
1For the emitter bias, the voltage across the emitter resistor is the same as the voltage between the emitter and the
- ABase
- BCollector
- CEmitter
- DGround
2For emitter bias, the voltage at the emitter is 0.7 V less than the
- ABase voltage
- BEmitter voltage
- CCollector voltage
- DGround voltage
3With voltage-divider bias, the base voltage is
- ALess than the base supply voltage
- BEqual to the base supply voltage
- CGreater than the base supply voltage
- DGreater than the collector supply voltage
4VDB is noted for its
- AUnstable collector voltage
- BVarying emitter current
- CLarge base current
- DStable Q point
5With VDB, an increase in the collector resistance will
- ADecrease the emitter voltage
- BDecrease the collector voltage
- CIncrease the emitter voltage
- DDecrease the emitter current
6VDB has a stable Q point like
- ABase bias
- BEmitter bias
- CCollector-feedback bias
- DEmitter-feedback bias
7VDB needs
- AOnly three resistors
- BOnly one supply
- CPrecision resistors
- DMore resistors to work better
8VDB normally operates in the
- AActive region
- BCutoff region
- CSaturation region
- DBreakdown region
9The collector voltage of a VDB circuit is not sensitive to changes in the
- ASupply voltage
- BEmitter resistance
- CCurrent gain
- DCollector resistance
10If the emitter resistance decreases in a VDB circuit, the collector voltage
- ADecreases
- BStays the same
- CIncreases
- DDoubles
11Base bias is associated with
- AAmplifiers
- BSwitching circuits
- CStable Q point
- DFixed emitter current
12If the emitter resistance is reduced by one-half in a VDB circuit, the collector current will
- ADouble
- BDrop in half
- CRemain the same
- DIncrease
13If the collector resistance decrease in a VDB circuit, the collector voltage will
- ADecrease
- BStay the same
- CIncrease
- DDouble
14The Q point of a VDB circuit is
- AHypersensitive to changes in current gain
- BSomewhat sensitive to changes in current gain
- CAlmost totally insensitive to changes in current gain
- DGreatly affected by temperature changes
15The base voltage of two-supply emitter bias (TSEB) is
- A0.7 V
- BVery large
- CNear 0 V
- D1.3 V
16If the emitter resistance doubles with TSEB, the collector current will
- ADrop in half
- BStay the same
- CDouble
- DIncrease
17If a splash of solder shorts the collector resistor of TSEB, the collector voltage will
- ADrop to zero
- BEqual the collector supply voltage
- CStay the same
- DDouble
18If the emitter resistance decreases with TSEB, the collector voltage will
- ADecrease
- BStay the same
- CIncrease
- DEqual the collector supply voltage
19If the base resistor opens with TSEB, the collector voltage will
- ADecrease
- BStay the same
- CIncrease slightly
- DEqual the collector supply voltage
20In TSEB, the base current must be very
- ASmall
- BLarge
- CUnstable
- DStable
21The Q point of TSEB does not depend on the
- AEmitter resistance
- BCollector resistance
- CCurrent gain
- DEmitter voltage
22The majority carriers in the emitter of a pnp transistor are
- AHoles
- BFree electrons
- CTrivalent atoms
- DPentavalent atoms
23The current gain of a pnp transistor is
- AThe negative of the npn current gain
- BThe collector current divided by the emitter current
- CNear zero
- DThe ratio of collector current to base current
24Which is the largest current in a pnp transistor?
- ABase current
- BEmitter current
- CCollector current
- DNone of these
25The currents of a pnp transistor are
- AUsually smaller than npn currents
- BOpposite npn currents
- CUsually larger than npn currents
- DNegative
26With pnp voltage-divider bias, you must use
- ANegative power supplies
- BPositive power supplies
- CResistors
- DGrounds
27With a TSEB pnp circuit using a negative Vcc supply, the emitter voltage is
- AEqual to the base voltage
- B0.7 V higher than the base voltage
- C0.7 V lower than the base voltage
- DEqual to the collector voltage
28In a well-designed VDB circuit, the base current is
- AMuch larger than the voltage divider current
- BEqual to the emitter current
- CMuch smaller than the voltage divider current
- DEqual to the collector current
29In a VDB circuit, the base input resistance Rin is
- AEqual to ßdc * Re
- BNormally smaller than Rth
- CEqual to ßdc*Rc
- DIndependent of ßdc
30In a TSEB circuit, the base voltage is approximately zero when
- AThe base resistor is very large
- BThe transistor is saturated
- Cßdc is very small
- DRb <0.01 ßdc*Re
Información
- Descripción
- Nuclear Program Test sobre Chapter 8 Transistor Biasing, creado por Katrina Himes el 15/05/2018.
- Autor
- Katrina Himes
- Idioma
- English
- Visitas
- 27
- Historial
- Creado el 15 may 2018 · actualizado el 15 may 2018
- Etiquetas
- Valoración
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