Test
Power Electronics Basics - 1
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Preguntas del test (9)
1Which is the Power semiconductor device having Highest switching speed;
- ABJT
- BIGBT
- CMOSFET
- DGTO
2Which is the Power semiconductor device having Highest voltage / current ratings;
- AMOSFET
- BGTO
- CSCR
- DIGBT
3Which is the Power semiconductor device having Can be most effectively paralleled;
- AIGBT
- BSITH
- CMOSFET
- DSCR
4Which is the Power semiconductor device having Gate-turn off capability with regenerative features;
- AGTO
- BSCR
- CMOSFET
- DIGBT
5In a rectifier, electrical power flows from the _________ side to the ________ side.
- ALoad to Load
- BLoad to Source
- CSource to Load
- DSource to Source
6For any waveform “Form factor” is always _______ or equal to unity.
- AMore than
- BLess than
- CNone of the above
- Da or b both
7A single phase diode bridge rectifier supplies a highly inductive load. The load current can be assumed to be ripple free. The ac supply side current waveform will be:
- Asinusoidal
- Bconstant dc
- Csquare
- Dtriangular
8The uncontrolled electronic switch employed in power electronic converters is:
- AThyristor
- BBJT
- CMOSFET
- DDIODE
9A phase controlled half controlled single phase converter is shown in Fig.Q86. The
control angle a = 30° The output dc voltage wave shape will be a s shown in
- AFig (A)
- BFig (B)
- CFig (C)
- DFig (D)
- AFig (A)
Información
- Descripción
- Test sobre Power Electronics Basics - 1, creado por er.dilipmoyal el 29/07/2015.
- Autor
- er.dilipmoyal
- Idioma
- English
- Visitas
- 4
- Valoración
- Aún sin valoraciones Valora este test