Quiz
70-138 7-13
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Questions in this quiz (78)
1Given the family of drain curves. From this drain curve explain working process when Vgs = -1V and Vgs = -2V.
- Azero gate voltage
- Bsmall reverse-biased gate voltage
- Ca gate voltage that achieves pinchoff
2Given the family of drain curves. From this drain curve explain working process when Vgs = 0.
- Azero gate voltage
- Bsmall reverse-biased gate voltage
- Ca gate voltage that achieves pinchoff
372. has the higher output voltage? Explain why?
- AA bridge rectifier has a higher output voltage since the entire AC peak-to-peak voltage appears across the output points of the bridge
- BThe full-wave rectifier has a higher...
- CThe same voltage in both cases
4Here is the circuit of RC low pass filter. The filtered output will be available across__________
- ACapacitor
- BResistance
- CGround
5Here is the circuit of RC low pass filter. Cut off Frequency will be:
- A
- B
- C
- A
675. How do you think why “NO current flows into the gate”?
- AAs the gate terminal is isolated from the main current carrying channel
- BAs the drain terminal is isolated from the main current carrying channel
- CAs the body terminal is isolated from the main current carrying channel
- DAs the source terminal is isolated from the main current carrying channel
776. How to differentiate current-voltage characteristics for a n-channel JFET and p-channel JFET? The figure below is respectively shown for the n-channel JFET and p-channel JFET
- AThe pinchoff voltage Vp for the n-channel JFET is negative and the gate-to-source voltage Vgs is usually negative: therefore, the ratio Vgs/Vp is POSITIVE. Similarly, the pinch-off voltage Vp for the p-channel JFET is POSITIVE and the gate-to-source voltage Vgs must be POSITIVE, and therefore the ratio Vgs/Vp is POSITIVE
- BThe pinchoff voltage Vp for the n-channel JFET is negative and the gate-to-source voltage Vgs is usually negative: therefore, the ratio Vgs/Vp is POSITIVE. Similarly, the pinch-off voltage Vp for the p-channel JFET is POSITIVE and the gate-to-source voltage Vgs must be POSITIVE, and therefore the ratio Vgs/Vp is NEGATIVE
- CThe pinchoff voltage Vp for the n-channel JFET is negative and the gate-to-source voltage Vgs is usually negative: therefore, the ratio Vgs/Vp is NEGATIVE. Similarly, the pinch-off voltage Vp for the p-channel JFET is POSITIVE and the gate-to-source voltage Vgs must be POSITIVE, and therefore the ratio Vgs/Vp is NEGATIVE
877. Identify a filter, which passes high-frequency signals and blocks, or impedes high-frequency signals.
- AHigh pass filter
- BActive filter
- CLow pass filter
978. Identify a filter, which passes low-frequency signals and blocks, or impedes high-frequency signals.
- ALow pass filter
- BActive filter
- CHigh pass filter
1079. Identify one of reasons, why the collector is made physically larger than the base in an N-P-N transistor?
to enable the collector [blank_start]to handle more heat without damage[blank_end]- Ato handle more heat without damage
1180. Identify the circuit of the electronic high-pass filter?
- A
- B
- C
- A
1281. Identify the circuit symbol for the n-channel depletion-mode JFET
- Aa
- Bb
- Cc
1382. Identify the correct statement for a given Figure.
- AThe lamp sometimes on, sometimes off
- BThe lamp is off
- CThe lamp is on
1483. Identify the correct statement for a given Figure
- AThe lamp is on
- BThe lamp is off
- CThe lamp sometimes on, sometimes off
1584. Identify the given filter.
- AHigh pass filter
- BLow pass filter
- CBandwith filter
1685. Identify the given filter
- ALow pass filter
- BHigh pass filter
- CPassive filter
1786. Identify the given filter
- APassive filter
- BLow pass filter
- CHigh pass filter
1887. Identify the leakage from given circuits
- Aa
- Bb
- Cc
1988. Identify unspecified chemical element in Figure
- AB
- BP
- CSi
2089. Identify which part of the diode shown in figure is P material and which part is N material:
- AThe anode is N material, the cathode is P material
- BThe anode is P material, the cathode is N material
- CThe anode is PN material, the cathode is PN material
2190. If a zener diode has 25 volts across it and 20mA of current flowing through it, what is the zener diode power dissipation?
- A3W
- B4W
- C5W
2291. If the channel of the FET is the p-type semiconductor, the current is carried by _____ so a positive is applied to the source and negative potential is applied to the drain
- AHoles
- BElectrons
- CElectrons and Holes
2392. If the channel of the JFET is the n-type semiconductor, the current is carried by [blank_start]electrons[blank_end], entering into the channel through the source and leaving through the drain. In this case a negative potential is applied to the source.
- Aelectrons
2493. If the channel of the JFET is the p-type semiconductor, the current is carried by [blank_start]holes[blank_end], so a positive potential is applied to the source and a negative potential is applied to the drain.
- Aholes
2594. If the drain, source, and channel are all a p-type material, and the transistor operates in both modes, this is a p-channel E-MOSFET?
- AFalse
- BTrue
2695. If the drain voltage increases, the condition shown in Figure can result , then explain working of JFET.
- AThe channel is pinched off at the drain terminal.
- BThe gate-to-channel pn junction becomes reverse biased near the drain terminal
- CThe space-charge region widens, extending farther into the channel
2796. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ______
- Ais decreased
- Bis increased
- Cremains the same
- Dnone of the above
2897. If zero gate voltage and a drain voltage that achieves pinch off at the drain terminal, then identify the current-voltage characteristic for this case.
- Aa
- Bb
- Cc
2997.1 If zero gate voltage and a drain voltage that achieves pinch off at the drain terminal, then identify the current-voltage characteristic for this case.
- Aa
- Bb
- Cc
3098. If zero gate voltage and a larger drain voltage is applied for the JFET, then identify the current-voltage characteristic for this case.
- Aa
- Bb
- Cc
3198.1 If zero gate voltage and a larger drain voltage is applied for the JFET, then identify the current-voltage characteristic for this case.
- Aa
- Bb
- Cc
3299. In a JFET, IDSS is known as ….
- Adrain to source current with gate shorted
- Bdrain to source current with gate open
- Cnone of the above
- Ddrain to source current
33100. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layer .........
- Aalmost touch each other
- Bnone of the above
- Chave large gap
- Dhave moderate gap
34101. In a p-channel, the charge carriers are …………..
- Aelectrons
- Bholes
- Cboth
- Dnone
35102. In figure shows, temperature modify the characteristics of a diode. What is the effect of temperature on reverse bias condition?
- AIn the reverse bias region increase in temperature causes the reverse saturation current of Si and Ge diodes doubles for every 10 C rise in temperature
- BIt increases forward voltage
- CIn the reverse bias region increase temp causes decreases in the cut-off voltage
36103. In Lab 4 you obtained kind of this family curves. So my question: in which configuration was obtained this graph
answer: [blank_start]common emitter configuration[blank_end]
- Acommon emitter configuration
37104. In many circuits the diode is often considered to be a perfect diode to simplify calculations. A perfect diode has zero voltage drop in the forward direction, and conducts no current in the reverse direction. So question, from your knowledge of basic electricity. What other component has zero voltage drop across its terminals in one condition, and conducts no current in an alternative condition?
- ADC ammeter
- BDC voltmeter
- CThe mechanical switch. When closed, it has no voltage drop across its terminals, and when open, it conducts no current
38105. In NPN transistor the flow from emitter to collector is composed of
- AIons
- BHoles
- CElectrons
39106. In PNP transistrs, the flow from emitter to collector is composed of
- AHoles
- BElectrons
- CIons
40107. In the case of common-emitter configuration the input characteristic is defined as ….
- Athe dependence of Ib from Vbe at a fixed value Vce
- Bthe dependence of Ie from Vce at a fixed value Vbe
- Cthe dependence of Ic from Vce at a fixed value Ib
41108. In the case of common-emitter configuration, the output characteristic is defined as ….
- Athe dependence of Ic from Vce at a fixed value Ib
- Bthe dependence of Ie from Vce at a fixed value Vbe
- Cthe dependence of Ib from Vbe at a fixed value Vce
42109. In the circuit shown in Figure, an arrow shows the direction of current, is diode connected correctly to permit current to flow? and notice the way the battery and the diode are connected. Is the anode at a higher or lower voltage then the cathode?
- AYes. The anode is connected to the positive battery terminal, and the cathode is connected to the negative battery terminal. Therefore, the anode is at a higher voltage than the cathode
- BNo. The cathode is connected to the positive battery terminal, and the anode is connected to the negative battery terminal. Therefore, the anode is at a higher voltage than the cathode
- CYes. But the cathode is connected to the positive battery terminal, and the anode is connected to the negative battery terminal. Therefore, the anode is at a lower voltage than the cathode
43110. In the library components of JFETS are represented by two samples: n-channel and p-channel. Below is shown circuit symbol of n-channel JFET. Identify the meaning of a Gate as a electrode
Answer: [blank_start]the control electrode[blank_end]
- Athe control electrode
44111. In the library components of JFETS are represented by two samples: n-channel and p-channel. Below is shown circuit symbol of n-channel JFET. Identify the meaning of a Source as a electrode
Answer: The electrode, from which [blank_start]the main charge carriers began to flow[blank_end]- Athe main charge carriers began to flow
45112. In the library components of the EWB program EMOSFETs are represented by two circuit symbols. Explain the difference between them.
- AThe source and substrate internally connected
- BThe source and substrate are accepting free carriers
- CThe source and substrate externally connected
46113. In the library components of the EWB program EMOSFETs circuit symbol are represented. Below is shown circuit symbol of n-channel MOSFET. Identify the meaning of number 2.
- Agate
- Bsource
- Cdrain
47114. In the library components of the EWB program EMOSFETs circuit symbol are represented. Below is shown circuit symbol of n-channel MOSFET. Identify the meaning of number 4
- AThe electrode, which internally connected to the ground
- BThe electrode, accepting these carriers
- CThe control electrode
48115. In the library components of the EWB program JFETs are represented by two samples: n-channel and p-channel.Below is shown circuit symbol of n-channel JFET. Identify the meaning of number 2
- AThe electrode, from which the main charge carriers began to flow
- BThe control electrode
- CThe electrode, accepting these carriers
49116. In the library components of the EWB program JFETs are represented by two samples: n-channel and p-channel.Below is shown circuit symbol of n-channel JFET. Identify the meaning of number 3
- AThe control electrode
- BThe electrode, accepting these carriers
- CThe electrode, from which the main charge carriers began to flow
50117. In the NPN transistor, what section is made very thin compared with the other two sections?
- AThe P or emitter section
- BThe P or collector section
- CThe P or base section
51118. In the shown figure are represented PN junction diode symbols. Identify the unknown stripe
- ACathode
- BAnode
- CDepletion region
52119. In which condition of JFET, the drain current Id increases approximately linearly with Vds?
- AWhen the voltage difference between the drain and source is HIGH and the drain-to-source current is HIGH
- BWhen the voltage difference between the drain and source is HIGH and the drain-to-source current is SMALL
- CWhen the voltage difference between the drain and source is SMALL and the drain-to-source current is SMALL
53120. In which condition the pinch-off occur for a n-channel JFET
- ABy applying negative voltage at the gate
- BBy applying negative voltage at the drain
- CBy applying negative voltage at the gate-to-drain
54121. In which condition the pinch-off occur for a n-channel JFET
Answer: [blank_start]By applying negative voltage at the gate[blank_end]- ABy applying negative voltage at the gate
55122. In which direction does the arrow point on an NPN transistor?
- Aoutward
- Bupward
- Cinward
56123. In which direction does the arrow point on an PNP transistor?
- Aoutward
- Binward
- Cupward
57124. Input impedance of JFETs is ___ and in this case the input current is ___.
- AVery low, small
- BLow, very small
- CHigh, very small
58125. Insert a diode into this schematic circuit in the correct direction to make it reverse-biased by the battery voltage
- Aa
- Bb
- Cc
59126. Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
- A3
- B4
- C2
60127. ____ is a break-up of covalent bond to form electron and hole pairs
- Ainjection
- Bgeneration
- Crecombination
61128. ___ is formed by joining P-type and N-type semiconductors together in very close contact
- Aphase transition
- BPN junction
62129. β is the ratio of collector to _____ current
- Abase
- Bcollector
- Cemitter
63130. One that clips positive part of voltage is known as
- Acurrent regulator
- Bclipper
- Cmultimeter
- Dvoltage regulator
64131. Low-frequency signals go through much easier and with less resistance and high frequency signals have a much harder getting through, which is why it's a low pass filter.
- ATrue
- BFalse
- CNo correct answer
65132. Most of the majority carriers from the emitter …….
- Apass through the base region to the collector
- Brecombine in the emitter
- Crecombine in the base
66133. Occurrence of operation with rapid increase of Id is
- Asaturation
- Bbreakdown
- Cpinch off
67134. PIV is which of the following?
- Apeak inverse voltage
- Bpositive input voltage
- Cpeak input voltage
- Dpeak immediate voltage
68135. Rectifier which results an output with a frequency twice input frequency that pulsates very half cycle of input voltage is
- Afull wave rectifier
- Bhalf wave rectifier
- Cmodulator
- Dregulator
69136. Refer to Fig. If D4 were to go short circuit, what would be the effect on the operation of the circuit?
- AFuse F1 would blow
- BA decrease in the current through D1
- CA larger peak current through D2 and D3
- DA higher voltage across the load
70137. Refer to Fig. If input B is more positive than input A. Which diodes will be conducting?
- AD1 and D4
- BD3 and D4
- CD1 and D2
- DD2 and D3
71138. Refer to Fig. What is the function of block A?
- ABridge rectifier
- BTransformer
- CReservoir Capacitor
- DLow pass filter
727) What is the letter designation for base current?
Answer: [blank_start]Ib[blank_end]- AIb
738) What is the letter designation for collector current?
Answer: [blank_start]Icc[blank_end]- AIcc
749) In a FET, there are __________ pn junctions at the sides
- Atwo
- Bthree
- Cfour
- Dfive
7510) The input impedance of a JFET is ________ that of an ordinary transistor
- Amore than
- Bequal to
- Cnone
- Dless than
7611) The output characteristics of a JFET closely resemble the output characteristics of a _____ valve
- Apentode
- Btetrode
- Ctriode
- Ddiode
7712) The constant-current region of a JFET lies between
- Acut off saturation
- Bcut off and pinch off
- Co and IDSS
- Dpinch off and breakdown
7813) A JFET has high input impedance because _______
- Ait is made of semicinductor material
- Binput is reverse biased
- Cof impurity atoms
- Dnone of the above
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- Quiz on 70-138 7-13, created by a k on 20/05/2020.
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- a k
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